An improved model of LDMOS power amplifier for suppressing metallic shielding cover effects
Shielding cover effects in LDMOS transistor are investigated in this paper. The internal and outer matching structures on the PCB are simulated using the commercial full-wave software HFSS. Under an Automation Testing Bench, the input-output responses of PA module are measured and compared. Finally, an improved scalable LDMOSFET PA model is proposed to predict three feedback path which give further guidance to design a good cavity structure and good alignment is obtained between measured and simulated results.