Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies
Higher threshold-voltage (V<sub>T</sub>) doping energy provides the deeper influence to channel controllability. For drive current (I<sub>DS</sub>) consideration, the higher one demonstrates the larger I<sub>DS</sub> value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and the drop ratio at higher doping energy process is converse at higher temperature stress.