Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs
Pseudomorphic Ge<sub>0.91</sub>Sn<sub>0.09</sub> on Ge on Si with strong photoluminescence and low defect density is used for p-MOSFET channels. The mobility of Ge<sub>0.91</sub>Sn<sub>0.09</sub> Quantum Well p-MOSFETs are higher than control Ge p-MOSFETs due to hole population in the GeSn wells. The 7.5% mobility enhancement on <;110> channel direction is observed using external transverse uniaxial tensile strain (~0.11%). The highest [Sn] of 9% in the channels grown by CVD, Pt SB S/D, high I<sub>on</sub>/I<sub>off</sub> ratio, and strain-enhanced mobility are obtained in this work.