New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation
In this paper, we investigate the recovery characteristics associated with negative bias temperature instability and channel hot carrier degradation in p-channel metal-oxide-semiconductor using a novel method of on-the-fly patterns of biases. We demonstrate experimentally that we can identify two types of mechanisms associated with degradation. One of them is associated with recovery dynamics, and the other relates to nonrecoverable degradation.