Characterization of memristor based on non-linear ion drift model
In the age of information and communication, information storage with the capability of non-volatile low power has attracted considerable interest. Memristive devices tend to pose these attributes and were achieved using nanotechnology. However, to design circuits with these memristive devices, the characteristion needs to be described by a mathematical model. Many models such as linear ion-drift model, non-linear ion-drift model, ThrEshold Adaptive Memristor(TEAM) model have been proposed. These models should mimic the physical devices and also be computationally efficient. In the present paper, the characterization of memristor based on SPICE non-linear ion drift model focusing on various parametric results to achieve better i-v characteristics compared to linear ion-drift model are presented.