A new approach to model the I/spl sim/V characteristics for nanoscale MOSFETs
A compact current voltage model is proposed for nanoscale MOSFET device. I/spl sim/V characteristics are plotted based on the modified mobility and carrier velocity saturation models including the high field effects along the entire channel. Results of the proposed model are in good agreement with the experimental and TCAD simulator results down to channel length of 10 nm MOSFET.