Model for NBTI in p-MOSFETs with ultra thin nitrided gated oxides
Negative bias temperature instability (NBTI) in p-MOSFETs is known as a major reliability issue for microelectronic devices. It has been suggested that NBTI is related to the generation of defects at the Si/SiO/sub 2/ interface during the electrical stress. In this work, the degradation of the threshold voltage, mobility and the drain current of p-MOSFET's with ultrathin nitrided gate oxides during NBTI stress is modelled providing a physical basis as to why nitridation of oxides increases NBTI. This model includes a gaussian spread of activation energies of the Si/sub 3//spl equiv/Si/spl middot/ centers (so called P/sub b0/ centres), as well as the field dependence of the mean activation energy.