Evaluation of RF and logic performance for 40 nm InAs/InGaAs composite channel HEMTs for high-speed and low-voltage applications
The DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In<sub>0.53</sub>Ga<sub>0.47</sub>As sub-channel were demonstrated. The drain current was 870 mA/mm (V<sub>ds</sub>=0.4V, V<sub>gs</sub>=0V) and maximum g<sub>m</sub> was 1750 mS/mm (V<sub>ds</sub>=0.5V, V<sub>gs</sub>=-0.65V). The devices showed high current gain cutoff frequency (f<sub>T</sub>) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAs HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.