Ambipolar Schottky barrier SOI MOSFETs
Recently, we proposed and demonstrated a novel Schottky barrier (SB) poly-Si thin-film transistor (TFT) that exhibits excellent ambipolar operation performance. In this work, we extend the idea to the fabrication of SB SOI devices. The new device employs a field-plate (or sub-gate) to induce an electrical drain extension in the active layer. The unique field-induced drain (FID) feature reduces effectively the off-state leakage current, while maintaining a reasonable on-current, resulting in significant improvement in the device performance.