Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses
This paper studies the coupled electrothermal-stress interaction mechanisms of a laterally diffused metal oxide semiconductor field effect transistor under direct current injection radio frequency pulses. Based on the measured threshold breakdown power in the high power microwave experiment, an analytical thermal stress model has been derived. Furthermore, the finite element method is used to calculate the transient temperature and stress profiles in comparison with both analytical results and those from commercial software.