Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles
This letter investigates the switching behavior of TaN/Al2O3:Ag:ZnO/ITO memristors fabricated on flexible substrates, for flexible nonvolatile memory and neuromorphic computing applications. The embedded Ag nanoparticles provide for improved device yield and reduced variability in resistance, from more than 160% to 30%. They also provide for reduced variability in set and reset voltages, from 35% to 18% and 40% to 11%, respectively. A synaptic behavior of this flexible device is demonstrated, making it a potential candidate for neuromorphic circuit applications. Furthermore, its low-power requirements make it more competitive for emulating biological systems.