InAlGaAs-InGaAs-InP RCE pin photodiode 1300 nm wavelength region
Currently, resonant cavity enhanced (RCE) photodetectors have received a great deal of attention for applications of photoreceivers with wavelength-selective capabilities and higher bandwith efficiency product. In the present work, we report on the design, growth and properties of RCE PIN photodiodes for 1300 nm wavelength region using In/sub 0.52/Al/sub 0.21/Ga/sub 0.27/As/InP bottom mirror overgrown by In/sub 0.5/3Ga/sub 0.47/As/InP PIN photodiode.