A generalized Poisson based model for defect spatial distribution in WSI
Discusses the use of the modified generalized Poisson binomial limit in modeling defect spatial distribution in WSI (wafer scale integration) and large-area VLSI chips. This model demonstrates the usefulness of generalized Poisson distributions for effectively taking into account the issues of the distribution of clusters and cluster sizes. The strength of the proposed model lies in its simplicity and its close adherence to the forms of defect patterns on a wafer. The model shows excellent fits to the data from simulated wafer maps with high clustering of defects. It also exhibits good fits to data from wafers with small-area, highly dispersed clusters.<<ETX>>