Broadband high efficiency GaN power amplifier
This paper reports on the design methodology and realization of a hybrid feedback power amplifier using discrete GaN HEMT die with chip & wire technology. The power amplifier was measured to have over 12.8 dB gain with ±0.85dB flatness and higher than 30.7 dBm output power over 100 MHz to 1GHz. Power added efficiency (PAE) of 61.3% was acquired at mid-band frequency and more than 54.5% from 100MHz to 1GHz.