Carbon NanoTube based logic gates structure for low power consumption at nano-scaled era
As day by day continuing research in the field of nanotechnology, the CMOS manufacturing process scaled down in nano-dimensions at the cost of severe process variations and high leakage current which resulting large power dissipation. Therefore the leakage current and power dissipation becomes increasingly more focused in VLSI circuit design. Carbon NanoTube Field Effect Transistor (CNFETs) is suited best alternatives to the conventional CMOS based devices. During various simulation results, unexpected reduction in process variation, ultra low (nano-scaled) power memory devices and superior improvement of Noise Margin, propagation delay, write-read margin and its stability is found. CNFETs based logic gates are compared with Conventional CMOS and FinFET based logic gates in respect to delay and power consumption.