Bipolar resistive switching behaviors of Ag/Si3N4/Pt memory device
The resistive switching behavior of Ag/Si<sub>3</sub>N<sub>4</sub>/Pt device was observed and studied for the first time. Resistance ratio larger than 4*10<sup>2</sup> and 10<sup>4</sup>s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si<sub>3</sub>N<sub>4</sub>/Pt devices.