N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process
We report the design and MBE growth of strain-balanced epitaxial structures on InP containing n-type modulation-doped InGaAlAs/InGaAs quantum wells and a new multi-step wet-etching process for laser fabrication.