Schottky barrier height tuning via nickel silicide as diffusion source dopant segregation scheme with microwave annealing
In this work, microwave annealing is explored to tune the Schottky barrier height between NiSi and Si via boron and arsenic dopant segregation using silicide as diffusion source scheme. The microwave annealing is found to be able to obtain equivalent electron and hole Schottky barrier heights at significantly lower temperature (>100 °C) compared with conventional rapid thermal annealing. A plausible interpretation has been further proposed to explain the impact of low temperature microwave annealing on formation of dopant segregated Schottky junctions. The effectiveness of Schottky barrier height tuning below 400 °C by microwave annealing paves the way to form advanced source/drain and contact structures for future ultra-scaled MOSFETs and monolithic 3D sequential integration.