Logic performance of 40 nm InAs/InxGa1−xAs composite channel HEMTs
Current Si-CMOS technology has come to a limit that novel semiconductors as alternative channel materials (Ge, InSb, InxGa1−xAs) are urgently needed for high-speed and low-power logic devices for post CMOS era [1]. Recent research shows III–V heterostructure field-effect transistors demonstrate aggressive merits due to its high electron mobility and rather mature process technology [2]. The outstanding low field electron transport characteristics of III–V materials make ultrahigh-speed switching at very low supply voltage possible [3]. Here, we present the latest advancement of 40 nm InAs/InxGa1−xAs composite channel High Electron Mobility Transistor (HEMT) devices that have achieved excellent digital logic characteristics at very low power level.