Trapping/detrapping characteristics of electrons and holes under dynamic NBTI stress on HfO2 and HfSiON gate dielectrics
DNBTI on HfO2 and HfSiON has been investigated. The DNBTI model under NBTI/passivated stress cycles has proposed. In addition, as compared with the recovery of the VTH and charge pumping current under passivated stress, the variation of the interface states are not main factor to reduce the magnitude of VTH during the passivated stress cycle.