Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs
An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance g<sub>m</sub> and the output conductance g<sub>d</sub> are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit g<sub>m</sub> / g<sub>d</sub> jointly with the lower value of the gate resistance R<sub>g</sub> lead to an improvement of the extrinsic frequency performance (f<sub>max</sub> and f<sub>t</sub>).