Stability of capacitance voltage linearity for high-k MIM capacitor
The need for increased MIM capacitance density has led to the introduction of new high-k dielectric materials into both CMOS and BiCMOS technologies. These materials, Ta/sub 2/O/sub 5/ and Al/sub 2/O/sub 3/, exhibit several non-idealities which require more careful study than more conventional SiO/sub 2/ and SiN dielectrics. In particular, the evolution and physical mechanisms for C versus V non linearity as a function of both frequency and temperature are reported, as well as the high temperature capacitance hysteresis and capacitance linearity variations over time. The characterization and understanding of these non-idealities is required to guarantee their acceptable performance for analog IC MIM applications.