A micromachined 805 GHz rectangular waveguide filter on silicon wafers
In this letter, a WR-1.0 rectangular waveguide band-pass filter is designed, which is fabricated using the deep reactive ion etching (DRIE) micromachining on silicon wafers. The filter consists of four inductive irises. Using Ansoft HFSS, the center frequency of the filter is at 805GHz and the insertion loss is about 1.5 dB within the 21GHz bandwidth. Effects of the DRIE process brought to the filter performance are also discussed.