0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE
Modulation-doped field effect transistors (MODFETs) with 0.23 μm gate lengths have been fabricated on an InAlAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800 mS/mm, and unity current gain cutoff frequency f t of over 120 GHz at room temperature have been achieved. These g m and f t values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE