Improved Monte Carlo algorithm for the simulation of /spl delta/-doped AlInAs/GaInAs HEMTs
A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its validity in the case of AlInAs/GaInAs HEMTs has been checked through the comparison, first, with a quantum Schrodinger-Poisson (SP) simulation in the case of a complicated layer structure, which is actually used in the fabrication of real devices, and second, with experimental results of static characteristics of recessed /spl delta/-doped HEMTs.