High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator
A GaAs-based high electron mobility metal-oxide-semiconductor field effect transistor (MOSFET) is fabricated using wet thermal oxidation of AlAs. Enhanced transport properties and interface smoothness result from use of a pseudomorphic In/sub 0.2/Ga/sub 0.8/As channel layer, yielding a high transconductance of 50 mS/mm (5 /spl mu/m gate length).