Complementary Resistive Switching in Flexible RRAM Devices
Complementary resistive switching (CRS) behavior in a flexible plastic substrate was studied for the first time in this letter. CRS behaviors in Al/Ni/NiAlOx/Al<sub>2</sub>O<sub>3-x</sub>/ITO device were demonstrated with excellent performance. A high-resistance ON/OFF ratio (~10<sup>3</sup>), 50-ms switch speed was successfully obtained. In addition, the mechanism of CRS behavior was interpreted by the redistribution of oxygen vacancies in NiAlO<sub>x</sub>/Al<sub>2</sub>O<sub>3-x</sub> stack layers. Such a CRS style flexible RRAM device is a possible solution for future integrated circuits application.