First automotive reliability assessment and drive-train performance of large-area 900V, 10mOhm SiC MOSFETs
For the first time we report on detailed, quantitative reliability measurements and accelerated life data for > 1,300 of 900V, 10mOhm, 32mm2 SiC MOSFETs being developed for automotive and industrial applications. SiC MOSFETs were characterized and subjected to High-Temperature Reverse Bias (HTRB), High-Temperature Gate Bias (HTGB), Thermal Shock, and High-Humidity High-Temperature Reverse Bias (H3TRB) in both module and discrete (TO-247) form. The maximum junction temperature (TJ) qualified was 175°C for the bare die. SiC MOSFET performance was benchmarked relative to commercial Si technology in an 88kW EV inverter similar to the 90kW Ford C-Max hybrid drive-train. Replacing Si IGBTs with only 32% of the chip area using SiC MOSFETs, measurements indicate a 78% reduction in drive-train inverter losses.