Homoepitaxial Growth and Device Characteristics of SiC on Off-Oriented Si-Face (0001) 4H-SiC
Homoepitaxial growth of unintentional doped, nitrogen (N) doped n-type, and boron (B) doped p-type 4H-SiC epilayers on off-oriented n-type and semi-insulating Si-face (0001) substrates was performed in a horizontal hot-wall chemical vapor deposition (HW-CVD) reactor with SiH 4 and C2H4 at temperature of 1500 degC and pressure of 40 Torr. The electrical and structural properties, and intentional in-situ doping in 4H-SiC epilayers were investigated by using room temperature Hall effect measurement, Raman scattering measurement, and secondary ion mass spectroscopy (SIMS). PiN and MESFET structural materials were obtained by growing B-doped and undoped 4H-SiC epitaxial layers on n-type substrates and N-doped and undoped on semi-insulating substrates, respectively. The I-V characteristics of high power PiN rectifiers, UV PiN detectors and MESFETs were presented