A Stress Technique Suitable For The In-Line Reliability Monitoring Of The Hot Carrier Endurance of Sub-0,5um MOSFETs
The purpose of this paper is to present a stress mode which allows the hot carrier endurance of sub-half micron MOSFETs to be evaluated within 100s of DC stress. Contrary to the classical approach which requires substantially longer test times (i.e. about 10s of DC stress at the maximum substrate current), the proposed technique is suitable for in-line reliability monitoring applications.