Effects of Al 2 O 3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors
Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O2 post-annealing on the conduction characteristic of BP FETs. With the Al2O3 capping, it forms ${p}$ -type into ambipolar transport and the electron mobility dramatically increases to 20–110 cm2/V·s in our case. Interestingly, with the O2 post-annealing, the transport can be tuned from ambipolar back to ${p}$ -type as the annealing time extends. It is attributed that the Al2O3 capping introduces an ${n}$ -type doping in BP channel while the O2 post-annealing dopes BP back into ${p}$ -type. Moreover, after the O2 post-annealing the interfacial POx might be formed, resulting in the degradation of subthreshold swing and on/off current ratio.