Device modeling for III-V semiconductors - an overview
This work presents an overview of several key technical considerations required for state-of-the-art nonlinear circuit simulation models of III-V HBT and FET devices. A unified large-signal modeling framework that incorporates the voltage and current dependence of nonlinear transit time and depletion capacitances in III-V HBTs, as well as the multiple voltage dependence of nonlinear capacitances in FETs is presented. Considerations for modeling thermal and electro-thermal interactions in III-V HBTs and FETs are reviewed and contrasted. Trends in advanced characterization techniques and their benefits for modeling are highlighted. Finally, selected recent advances in mathematical CAD techniques are reviewed with particular relevance for advanced circuit modeling of III-V devices.