Nitride Trapping Memory Technology to Realize Flash-Embedded SoC of 65nm and Beyond
Nitride trapping memory technology to realize flash-embedded SoC of 65nm and beyond has been demonstrated for the first time. The device of 0.024 mum2/bit has been fabricated with advanced SoC process, comprising NiSi-salicidation, ultra shallow junction, fine planarization, WL gap-filling and highly reliable Cu/FSG interconnect with very narrow pitch. In-process charging damage has been eliminated by newly developed FEOL-level protection diode.