Bias-dependent linear, scalable millimeter-wave FET model
This paper describes a measurement-based, bias-dependent, linear equivalent circuit FET/HEMT model that is accurate to at least 100 GHz and scalable up to 12 parallel gate fingers and from 100-1000 /spl mu/m total gate width. The equivalent circuit element values are determined at each bias point in V/sub gs/-V/sub ds/ space.