A Model For Photoresist-induced Charging Damage In Ultra-thin Gate Oxides
The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the 0 2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.