Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics
An improved method for the assessment of the oxide thickness applicable to advanced CMOS technologies is proposed. To this end, a proper combination of Maserjian's technique and of Vincent's method is used to alleviate the unknown parameter inherent to both extraction procedures and which depends on the employed carrier statistics. The new method has been successfully applied to various technologies with gate oxide thickness ranging from 7 nm to 1.8 nm.