Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs
Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate (DG) MOSFETs are investigated using 2D full-band self-consistent ensemble Monte Carlo (MC) method based on solving quantum Boltzmann equation (QBE). Results show that the effect of the surface roughness on carrier quasi-ballistic transport in DG nMOSFETs is still significant even when the gate length scales down to 10 nm. Moreover, the influence of surface roughness can be suppressed by the non-local transport since the on-current of the Ge DG nMOSFETs decreasing less than that of Si DG nMOSFETs with increasing of surface roughness