An improved performance 62.7 GHz low power divide-by-16 InP-based HBT circuit
We report improved static divider performance of 62.7 GHz maximum toggle frequency at power levels of 60 mW/flip-flop using a highly manufacturable AlInAs/GaInAs single heterojunction HBT on semi-insulating InP substrates. This improvement was made by reduction in collector-base capacitance and has been achieved with no apparent reduction in yield.