Process match between DSA and LSA for ultra-shallow junction formation
Laser anneal (LA) is one of major millisecond anneal techniques (MSA) for forming ultra-shallow and highly activated junctions. There are two major commercially available laser anneal systems which are called laser spike annealing (LSA) and dynamic surface annealing (DSA) respectively. LSA and DSA are quite different in terms of laser source, wavelength, scanning mode and so on, their hardware and process specifications are definitely distinct from each other. In this work, the process match between DSA and LSA for ultra-shallow junction formation was studied using implanted blanket wafers as well as 45nm logic device wafers. It was found that through some process tuning knobs adjustments, such as peak temperature, dwell time, DSA can match LSA thermal budget well.