Implementation of self-heating and trapping effects in surface potential model of AlGaN/GaN HEMTs
The self-heating and charge trapping effects are implemented in surface-potential (SP) based large signal model of AlGaN/GaN HEMTs in this paper. The self-heating effect (SHE) is incorporated into nonlinear current model by embedding temperature increment into free-carrier mobility model. Moreover, the dispersion due to trapping effect is modeled through an effective gate-source voltage based methods. The experimental results show that the proposed model can accurately predict the static (DC) and pulsed-gate-and-drain IV (PIV) characteristics of the device over a wide bias. And the small-signal and large-signal behavior is also verified with good accuracy.