A Ku-band high efficiency ion-implanted MMIC amplifier
The design of a three-stage single-ended power amplifier is described. Of the MMIC (monolithic microwave integrated circuit) amplifiers reported, this MMIC amplifier has the highest power gain of 18 dB, the highest power added efficiency of 30 percent, and a broad bandwidth from 12 GHz to 16 GHz. Also described are other pertinent factors of the ion implantation process.<<ETX>>