Orthogonal optimization design for structural parameters of SiC reversely switched dynistor
In order to optimize the turn-on characteristics of the SiC reversely switched dynistor (RSD), by the orthogonal experimental design method, the optimum structural parameters for the voltage rate of 4kV are proposed in this paper, with full consideration of the influences of the several key parameters of SiC RSD. The influences of the single factors that contain the main structural parameters of the doping concentration, the width and length, the carrier lifetime, etc., on the quasi-static voltage drop are discussed, separately. According to the orthogonal table L18(37) of 7 factors and 3 levels, the turn-on voltage of the 18 groups is simulated and the optimized structure is acquired. The blocking voltage of 750V and 2340V are acquired in experiment for two different specifications of epitaxy wafers, with bevel edge termination.