Graphite planar resistive switching memory and its application in pattern recognition
Resistive switching memory with a planar graphene nanoribbon structure has shown steady memory characteristics. By mechanically exfoliating the graphene sheet over a layer of 300nm SiO2 substrate, the device was fabricated with one step of electron beam lithography and physical vapor deposition. The device has an on/off ratio over 103, and exhibits multilevel resistive switching characteristics, making it possible to act as a synaptic device. Here we designed an artificial neuron network (ANN) to recognize images of 6 different letters, and the images were successfully distinguished. This result proposes a way to implement neuromorphic computation with carbon electronics.