/spl lambda/ = 1.3 /spl mu/m high density InGaAs/GaAs quantum dots grown by molecular beam epitaxy
In<sub>x</sub>Ga<sub>1-x</sub>As (x=0.5-0.75) QD's of high density of 1.3 times 10<sup>11</sup> cm<sup>-2</sup> and uniform size (diameter ~ 23-nm and height ~ 4-nm) were obtained by MBE. lambda = 1.3 mum emission was observed for In<sub>0.65</sub>Ga<sub>0.35</sub>As QD's capped with In<sub>0.1</sub>Ga<sub>0.9</sub>As