A computational study of dopant-segregated Schottky barrier MOSFETs
Recently a novel device structure called dopant-segregated Schottky barrier MOSFETs (DSS SBTs) has been proposed where the Schottky barrier height can be significantly reduced thus achieving much larger drain currents. Although quite a few experimental studies have been performed on this structure, further investigation on the carrier transport mechanism is required for the optimization of device design. In this work we investigate the 45-nm SOI dopant-segregated SBTs by Monte Carlo method. The feature that DSS structure can improve on-current is revealed. The influence of the DSS parameters on devices performance is also investigated.