Multilevel flash memory on-chip error correction based on trellis coded modulation
This paper presents a multilevel (ML) flash memory on-chip error correction system design based on the concept of trellis coded modulation (TCM). This is motivated by the non-trivial modulation process in ML memory storage and the effectiveness of TCM on integrating coding with modulation to provide better performance. Using code storage 2bits/cell flash memory as a test vehicle, the effectiveness of TCM-based systems, in terms of error-correcting performance, coding redundancy, silicon cost, and operation latency, has been successfully demonstrated