Process Integration Considerations for 300 mm TSV Manufacturing
Through-silicon via (TSV) will transition to high volume production when end-customer value (as exhibited by functionality, performance, form factor, etc.) are delivered at equivalent yield and cost. While this has been successfully achieved for CMOS image sensors (starting with 200 mm), significant work remains to be done in the TSV value chain (design-materials-process-packaging-test) in the communication and memory segments. This paper will address key unit process/process-integration challenges and highlight recent internal/ partner and industry findings in the context of TSV manufacturability at 300 mm.