Terahert detection analysis of nanowire gated field effect transistor
An analytical terahertz (THz) detection model of the Silicon nanowire MOSFET (NWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated.