Electric field dependence of TDDB activation energy in ultrathin oxides
A study of the electric field dependence of the TDDB activation energy is presented for 12 nm down to 4.7 nm thin oxides. It is shown that the TDDB activation energy depends linearly on the stress electric field and that this behavior depends strongly on the oxide thickness. Moreover, a relationship between the TDDB activation energy attenuation per WV/cm and the oxide thickness has been found. As will be demonstrated, these results are of great importance for the rigorous estimation of the oxide lifetime of both present and future technologies.