Improvement of AlInP-AlGaInP MQW light-emitting diode by meshed contact layer
The optical output power of the AlInP-AlGaInP light-emitting diodes was pronouncedly enhanced 1.45 times at 20 mA without degrading the electrical characteristics by introducing the meshed GaAs contact layer. Both theoretical simulation and experimental analysis were used to demonstrate the feasibility of the proposed structure.