Indium-zinc-oxide electric-double-layer thin-film transistors for artificial synapse applications
Phosphorous-doped nanogranular SiO2 gated laterally coupled indium-zinc-oxide electric-double-layer synaptic transistors are self-assembled on glass substrate. A strong electric-double-layer effect is observed. Synaptic functions, such as excitatory postsynaptic currents (EPSC) and paired-pulse facilitation (PPF) are mimicked on the proposed IZO synaptic transistor. The time scales of the PPF behaviors are similar to that observed in biological synapse. The proposed synaptic transistors are meaningful for neuron bionics.