Robust low-voltage program-erasable capacitors of Pd-Al2O3-Si with high density Ru-based nanocrystals embedded
Pd electrode-based metal-oxide-semiconductor (MOS) capacitors with high density Ru-based nanocrystals in atomic-layer-deposited Al2O3 dielectric have been fabricated and electrically characterized, exhibiting robust programming and erasing characteristics even under low voltages. Further, the tunable memory characteristics of the MOS capacitors are demonstrated by varying the tunneling-layer (T)/blocking-layer (B) thickness ratio, and the underlying mechanisms are addressed.