Terahertz detection in Si MOSFET based on thermionic emission
In this work, a new detection method for Terahertz (THz) radiation in a MOSFET transistor based on Thermionic Emission (TE) has been demonstrated. Theoretical analysis and experimental data have shown that under sub-threshold biasing conditions, the detection of THz signals from thermionic emission through a potential barrier between the highly doped source region and depleted channel region is far greater than the plasmonic detection in strongly inverted channel region of the MOSFET. TE detection using conventional CMOS processes offers a better cost and performance alternative to microbolometers and pyroelectric detectors. A photo-voltaic readout mode for THz detectors is described along with a methodology for measuring responsivity.