Coulomb Scattering induced mobility degradation in Ultrathin-body SOI MOSFETs with high-k gate stack
The mobility degradation in ultrathin-body (UTB) SOI MOSFETs with high-k gate stack induced by Coulomb scattering rates is studied. The Coulomb scattering limited electron mobility for different gate dielectric materials and different silicon body thickness are calculated based on Coulomb scattering theories. The results show that increasing the dielectric constant of high-k gate dielectrics and decreasing the Si body thickness of UTB SOI may suppress the mobility degradation caused by Coulomb scattering. Related explanations on the phenomenon are proposed