A Fully Integrated SiGe BiCMOS Power Amplifier for 2.4GHz Wireless-LAN Application
A 2.4GHz power amplifier (PA) for Wireless-LAN application is designed and implemented in 0.18µm SiGe BiCMOS technology. Without any off-chip component or band wire for matching, the proposed power amplifier is fully integrated, which has a two-stage structure with temperature-insensitive biasing circuit to improve the linearity with almost no increase in die area. S parameter simulation results show that input impedance matching S11 and output impedance matching S22 is less than -13dB and -20dB respectively. The power amplifier has a power gain of 27.3dB, output 1dB compression point of 23.2dBm, and a power added efficiency(PAE) of 21.3%.The area of the die is 1148×1140µm2 with all elements integrated on a single chip.