The Schottky characteristics of Ti/n-GaAs surface-treated by N/sub 2/ plasma
The Schottky characteristics of Ti contacts on n-GaAs surface-treated by N/sub 2/ plasma at different temperature are studied. The capacitance-voltage (C-V) characteristic of the samples surface-treated by N/sub 2/ plasma is far more ideal than that of the pure GaAs samples. The Schottky characteristic of the samples surface-treated at 350/spl deg/C is better than that of samples treated at 950/spl deg/C. In this article, the zero-bias Schottky barrier height (SBH) /spl Phi//sub b0/, the flat-band SBH /spl Phi//sub b//sup 0/, the thickness of the interfacial layer /spl delta/, the permittivity of the interfacial layer /spl epsiv//sub i/ and the ideality factor n of the samples at different nitridation temperature are extracted from the forward, reverse current-voltage (I-V) and the C-V measurement, respectively. Also the distribution of interface states density is qualitatively determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.