An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain
A two-dimensional (2D) analytical model of double-gate (DG) MOSFETs with Schottky source/drain(S/D) is developed based on solving Poisson equation. We calculated the 2D potential distribution in the channel. An expression for threshold voltage for short-channel DG MOSFETs with Schottky S/D is also presented by defining the turning on condition. The results of the model are verified by numerical simulator, DESSIS 8.0