Study on Switching Characteristics of Reversely Switched Dynistor With an N-Buffer Layer
In this paper, an N-buffer layer has been introduced into the reversely switched dynistor (RSD). The relationship between the buffer layer and the device characteristics, together with the interaction among structural parameters, is discussed by the orthogonal method in detail. Based on the simulation results, buffer thickness W<sub>n-buffer</sub> and buffer concentration N<sub>n-buffer</sub>, N<sup>+</sup> emitter concentration N<sub>n+</sub>, and P<sup>+</sup> emitter concentration N<sub>p+</sub> at anode can all affect the maximum turn-ON voltage U<sub>Fmax</sub> on the RSD. Furthermore, the U<sub>Fmax</sub> increases with increasing W<sub>n-buffer</sub> or decreasing N<sub>p+</sub>, and if N<sub>n-buffer</sub> becomes higher continuously, the U<sub>Fmax</sub> slightly decreases first, and then dramatically goes up. Besides, the interaction between N<sub>n-buffer</sub> and W<sub>n-buffer</sub> has a dramatic impact on the U<sub>Fmax</sub>. When N<sub>n-buffer</sub> = 1E17 cm<sup>-3</sup>, W<sub>n-buffer</sub> = 10 μm, N<sub>p+</sub> = 1E18 cm<sup>-3</sup>, and N<sub>n+</sub> = 1E20 cm<sup>-3</sup>, U<sub>Fmax</sub> reaches its minimum in all the simulations. The experimental results verify the device characteristic's improvement by introducing the buffer layer.