A novel recessed-channel tu nneling FET design with boosted drive current and suppressed leakage current
In this paper, we propose a recessed-channel (U-shape-channel) tunneling field-effect-transistor (TFET) for 16-nm technology applications. This new device structure has the advantages of boosted Ion and suppressed Ioff compared to the planar bulk-Si TFETs. Using Sentaurus TCAD simulations, it is found that the recessed channel will enlarge the tunneling area which will greatly enhance the drive current. Meanwhile, a steeper subthreshold swing (SS) will be realized in the U-shape TFET.