A New Dual-Channel Resonant Gate Drive Circuit for Low Gate Drive Loss and Low Switching Loss
At high-frequency applications, the gate drive loss of the power metal oxide semiconductor field-effect transistor (MOSFET) becomes quite significant. A new dual-channel low side resonant gate drive circuit is proposed in this paper. The proposed drive circuit can provide two symmetrical drive signals for driving two MOSFETs. It charges and discharges the MOSFET gate capacitor with a constant current source. Both gate drive loss and, more importantly, switching loss can be reduced significantly. The proposed resonant gate drive circuit can be used to drive the synchronous MOSFETs in a current doubler or full-wave rectifier configuration. It can also be used to drive the primary MOSFETs in push-pull converters. Analysis, computer simulation, and experimental results show that significant power loss reduction is achieved by the proposed circuit.