Highly linear, wide-dynamic-range multiple-input translinear element networks
In this paper, we propose a modification to the class of circuits known as multiple input translinear element (MITE) networks. Our proposed modification leads to a MITE network that is free from certain nonidealities encountered in previous implementations. Further, the new MITE network described here readily accommodates the use of bipolar junction transistors in the input and output stages, thus implying a significantly wider dynamic range than we can achieve using subthreshold MOSFETs.