CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodes
Planar, interdigitated pin photodiodes with varying implanted electrode depths have been fabricated on 2 µm-thick silicon-on-insulator substrates using a conventional CMOS platform technology. The bandwidth at 850 nm wavelength was found to achieve an optimum of 4 GHz with an electrode depth of 1 µm.