A novel ultra-low-energy bulk dynamic threshold PMOS scheme
In this paper we introduce a new dynamic threshold MOSFET scheme for PMOS transistors in bulk-CMOS technology. The proposed scheme can be applied to subthreshold dynamic and static circuits. The proposed scheme is shown to have 54% saving in energy if compared to the regular subthreshold DTPMOS scheme, which makes it attractive for ultra-low-energy moderate-performance devices. The proposed scheme is also shown to be more robust against temperature variations.