Electrical and optical properties of RF sputtered zinc oxide films
Zinc oxide films were deposited by RF sputtering using an oxide target with a room-temperature substrate. Dry air and argon were used as ambients. The target-to-substrate (T-S) distance was varied between 3 cm and 7 cm. The as-grown films were highly resistive and there was no marked difference in the electrical, optical, and structural properties for the films grown at different (T-S) distances and in different ambients.<<ETX>>