Electrical characterization of ultrathin single crystalline Gd2O3/Si(100) with Pt top electrode
Capacitor composed of single crystalline Gd<sub>2</sub>O<sub>3</sub> on Si(100) with Pt top electrode was fabricated by molecular beam epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd<sub>2</sub>O<sub>3</sub>/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function of Pt on Gd<sub>2</sub>O<sub>3</sub> is pinned at 4.75 eV and due to the lattice mismatch between Gd<sub>2</sub>O<sub>3</sub>, the interface state density is in the level of 10<sup>13</sup> extracted by Terman and conductance methods.