A Parabolic Potential Barrier-Oriented Compact Model for the $k_{B}T$ Layer's Width in Nano-MOSFETs
On the basis of a parabolic potential profile around the source-channel junction barrier of nanoscale MOSFETs, a new compact model is physically derived, which links the width of thermal energy kBT layer (a critical zone in the context of the backscattering theory) to the geometrical and bias parameters of the devices. The proposed model is supported by experimental data and by a critical analysis of various simulation works presented in the literature. The only fitting parameter remains constant in a wide range of channel length (10-65 nm), gate voltage (0.4-1.2 V), drain voltage (0.2-1.2 V), and temperature (100 K-500 K). The confusing temperature-dependent issues in the open literature are straightforwardly clarified.