Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic ƒ<inf>T</inf> and ƒ<inf>max</inf> have been obtained and compared with experimental data, getting a good agreement for ƒ<inf>T</inf> but some discrepancies for ƒ<inf>max</inf>. Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (F<inf>min</inf>=0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm.