High-performance Inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as Gate Dielectric
In this paper, the authors have demonstrated high-performance inversion-type E-mode In0.65Ga0.35As MOSFETs using ALD high-k gate dielectrics such as ALD Al2O3 and HfO2 with a maximum inversion current as high as 1.05 A/mm and a peak transconductance of 0.37 S/mm. These results suggest In-rich InGaAs could be an ideal channel material which is easy to integrate with high-k dielectrics and has a higher electron effective mobility and a wide enough bandgap for low-power and high-speed CMOS applications.