A novel empirical model for SiC MESFETs with self-heating effect
In this paper, a novel empirical model based on Angelov model for SiC MESFETs with self-heating effect is presented. Modifications of drain current and nonlinear capacitive model are proposed to adapt to the measured date without the thermal subcircuit. These new models could simplify the equivalent circuit topology and are easier to implement in CAD simulation tools. A good agreement has been obtained between simulated and measured results.