Comparison of electrical performances of metal-insulator-metal capacitors with sputtered HfO2 and BZT-HfO2 dielectrics
Sputtered HfO<inf>2</inf> and co-sputtered BZT-HfO<inf>2</inf> dielectrics have been compared for high density metal-insulator-metal (MIM) capacitors, which are required for radio frequency and analog/mixed-signal integrated circuits. The MIM capacitor with BZT-HfO<inf>2</inf> shows a high permittivity value of 20.8, and the small quadratic voltage coefficient of capacitance of 1830 ppm/V<sup>2</sup> at 100kHz compared to that with HfO<inf>2</inf> dielectric. Further, the leakage characteristics of the capacitors with HfO<inf>2</inf> and BZT-HfO<inf>2</inf> dielectrics have been studied as a function of measurement temperature, and the conduction mechanisms are discussed.