Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator
A double-gate Schottky barrier tunneling transistor (DGSBTT) structure is investigated by a 2-D full-band Monte Carlo device simulator. A Schottky barrier contact model including tunneling effect and Schottky effect has been implemented in this simulator. The result shows that DGSBTF has a big performance improvement compare to single gate SBTT, its Ion/Ioff is more than 10/sup 5/ at Vds= 1.0 V.