Linear RF power amplifier design for CDMA signals
In this paper, we analyze the nonlinear effect of an RF power amplifier on CDMA signals and then derive the design formulas which provide the direct relation between the power transistor's traditional nonlinearity parameter, the 3rd order intercept point (IP3) and the out-of-band emission levels for CDMA signals. This result will be very useful to system and component engineers in design of RF power amplifiers for CDMA wireless systems.