Electrical spin injection into InAs nanowires by local measurement
Electrical spin injection into semiconductors is fundamental to realize spintronic devices using the electron spin degree of freedom instead of or in addition to the charge. Datta-Das spin eld-eect transistor is a classical scheme which comprises ferromagnetic spin injector and detector while injected spins in the channel are manipulated by electric field. InAs nanowire is a suitable candidate as semiconductor channel in spin-FET because of its high electron mobility and especially strong spin-orbital interaction which makes it easier to control the precession of injected spins. In this work, we report the local measurement of spin transport characteristics in a InAs lateral spin valve, with Co/MgAl2O4 as the tunnel barrier contact.