UV nonvolatile sensor by using SONOS capacitor device
The silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices can be candidates for nonvolatile ultraviolet UV radiation sensors. In the case of SONOS type UV radiation sensors, the UV radiation induces a significant increase of threshold voltage for SONOS by UV-assisted-low-gate-voltage program. The change of threshold voltage for SONOS after UV ray expose has a correlation to the dose of UV ray exposure. In this paper, the performance of capacitor types of SONOS used for UV sensor was studied. The data of SONOS UV radiation sensors wrote by UV-assisted-low-gate-voltage program was nonvolatile at least for 1 month. The SONOS capacitor device with ONO gate dielectric in this study has demonstrated the feasibility for UV nonvolatile sensor application.