Stateful Logic Operations Implemented With Graphite Resistive Switching Memory
Memristor-based logic operation has attracted a lot of interest ever since the material implication and NAND logic operations were successfully implemented with several memristive devices. Here, we present a memory device fabricated with graphite membrane, which has a simple two terminal planar structure and high ON/OFF ratio over <inline-formula> <tex-math notation="LaTeX">$10^{2}$ </tex-math></inline-formula>. We use the memory device to establish logic gates, and stateful logic operations were successfully carried out. This letter paves the way for carbon electronics to be used in new computation technology.