3D Monte Carlo simulation of Gate-All-Around Germanium nMOSFET
Gate-All-Around mosfets have been investigated as promising new device structures, and Germanium is used for its high carrier mobility. In this paper, a 3D parallel Monte Carlo simulation of GAA Ge Nanowire nMOSFET with Effective Potential Method is implemented. Compared the simulation results with classical results, we can see that the quantum effects have an affect on the distribution of density, velocity and energy, and they make a decrease on the drain current as well.