Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance
A novel nano-scale SOI device featuring silicide Schottky source/drain and field-induced S/D extensions is proposed and demonstrated. Excellent p- and n-channel performance with nearly ideal subthreshold swing (/spl sim/ 60 mV/dec.) and high on-/off-state current ratio (>10/sup 9/ and >10/sup 8/ for n- and p-channel modes, respectively) is realized, for the first time, on a single device. These encouraging results suggest that the new device may represent a potential alternative to post-CMOS device applications.