Trapping and gate leakage currents effects in large signal modeling of microwave GaN HEMTs
This paper presents the investigation on the influence brought by trapping effects and gate leakage current in GaN HEMTs on the large signal performance as well as the DC characteristics. Kink effect is also taken into consideration in our model. The bias dependent threshold voltage Vds-kink has been studied. Results show that the leakage current will have a great effect on the DC performance while the trapping effects are the opposite case. In terms of large signal performance, the effects brought by gate leakage current will be distinct only when the input power is relatively high while the ones brought by substrate trapping is obvious regardless of the value of input power.