Improved Parameter Extraction Procedure for PSP-Based MOS Varactor Model
We present an improved procedure for extracting parasitic capacitance parameters and gate current parameters for MOSVAR, the industry standard MOS varactormodel. Our technique is verified against measured data from three technology nodes (180 nm, 130 nm and 65 nm), and is also used to validate the MOSVAR P-gate/P-well tunneling current sub-model.