Ballistic deflection transistor very high frequency modeling
To respond to the increase of worldwide information demand, in terms of quantity and speed, many different ways in electronics are developed. In the field of semiconductor devices, the Ballistic Deflection Transistor (BDT) [1] can have a significant impact. Indeed, an ultra-fast electron motion associated with a unique non-linear behavior allows this component to be a major actor for new kind of Terahertz (THz) logical circuits. The aim of this work is to provide theoretical analysis of this device under ultra-high frequency excitation. The BDT, presented in Fig. 1, is a planar six-terminal structure etched on an InAlAs/InGaAs heterostructure which provide a two dimensional electron gas. Unlike classic transistors, where the flow of electron is switched off and on, the concept of BDT is to steer the carriers from one side to another, thanks to two gates (in push-pull configuration: VLG=-VRG) and a triangular deflector strategically positioned, while maintaining their ballistic motion. This device offers a non-linear transfer characteristic, shown in Fig. 2, which grants operating opportunities at very high frequency [2].