Performance improvement by stack structure in flexible resistive random access memory
Resistive random access memory (RRAM) has been widely investigated. However, for the applications in flexible electronics, this type of memory is not so widely investigated for its requirement of the low processing temperature. In this paper, we demonstrated an Al<sub>2</sub>O<sub>3</sub>-based FRRAM fabricated under low temperature, and improved its performance by utilizing Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> functional stack.