1–7 GHz wideband low loss SPDT switch MMIC
A low loss wideband (1-7GHz) SPDT switch using 0.13μm GaAs/InAlAs MHEMT MMIC process is designed, fabricated and tested both on-wafer and in test fixture. The measured results are in close agreement with specifications and simulations, which exhibit insertion loss of 1.05 ±0.05dB, with isolation of 28dB, minimum. All three ports of this SPDT switch are well matched having return loss of more than 14 dB because of series-shunt topology. A series capacitor is also introduced in the common arm working as a DC block. The simulated 1-dB compression takes place at input power of more than +18dBm at 7 GHz and IIP3 is better than +33.5dBm. Being gate voltages of -1.5V and 0V, negligible (<;1mW) power is consumed while operating this switch. This SPDT switch measuring less than 1 mm2 in area enables on chip integration with high performance redundant Ka-band down-converter system-on-chip (SoC). Low loss, high isolation, compactness are the key features of this switch MMIC.