A 40-nm-Gate InAs/In0.7Ga0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT
A 40-nm T-gate high-electron-mobility-transistor with InAs/In<inf>0.7</inf>Ga<inf>0.3</inf>As composite-channel has been fabricated. The device exhibits a transconductance (g<inf>m</inf>) of 2200 mS/mm, a cutoff frequency f<inf>T</inf> of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.