Transition from ballistic to ohmic transport in T-Branch junctions at room temperature in GalnAs/AlInAs heterostructures
We have developed technology based on GalnAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-branch junctions (TBJs), Y-branch junctions (YBJs)). Then we present DC characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-branch junctions (YBJs).