Indium-Zinc-Oxide Neuron Thin Film Transistors Laterally Coupled by Sodium Alginate Electrolytes
Neuromorphic devices are of great significance for capturing the computation power of the neural network with ultralow energy consumption and extremely high efficiency. Here, multigate indium-zinc-oxide-based neuron thin film transistors laterally coupled by sodium alginate electrolyte films were fabricated polyethylene terephthalate substrates for neuromorphic system application. The dynamic range of the synaptic response can be effectively modulated by the third modulatory input. More importantly, multiplicative operation was realized successfully based on the rate-coding mode. Such laterally coupled oxide-based neuron transistors could be used as the potential building block in neuromorphic systems.