Effect of gas switching on InP/InGaAs interfaces during CBE growth
In this paper, the effect of a simple gas switching sequence on interface abruptness during CBE growth is studied using double crystal X-ray diffraction (DCXRD), photoluminescence (PL), and scanning tunneling microscopy (STM). Optimization of the switching sequence produces monolayer abruptness for both the InP/InGaAs and the InGaAs/InP interfaces.