Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through experiments can be overcome by the onset of an appropriate numerical protocol. In this framework, we propose a Monte Carlo calculation of both diffusion coefficient and noise temperature of bulk In0.53Ga0.47As and InAs within a correlation functions formalism.