880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$  MIS Gate Trench CAVET on Bulk GaN Substrates
In this letter, we report a high-voltage metal-insulator-semiconductor gate trench current aperture vertical electron transistor using metal–organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si<sub>3</sub>N<sub>4</sub> as the gate dielectric. The device had a high breakdown voltage of 880 V and a low <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm {on,sp}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.7~\text {m}\Omega \cdot \text {cm}^{2}$ </tex-math></inline-formula>. A low hysteresis of ~0.1 V was observed due to the high quality of the in situ Si<sub>3</sub>N<sub>4</sub>.