First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)
GaN lateral transistors (HEMTs) continue to penetrate the power electronics market demonstrating excellent performance in the medium power applications. However, for power applications 10kW and higher, vertical GaN devices are preferred over lateral one, since the former offers higher current and power densities. To date, several different vertical transistor structures have been proposed and reported, such as in-situ oxide based vertical trench MOSFET with an undoped GaN interlayer as a channel (OGFET) [1, 2], current aperture vertical electron transistors (CAVETs) [3, 4], junction field effect transistors (JFETs) [5, 6] and MOSFETs [7, 8]. Gupta et al. have demonstrated the high performance OGFET with low specific on-state resistance (Ron, sp) recently [1]. This study presents the large device scaling of the OGFET to realize high output current.