Optimum design of multi-finger SiGe HBT with non-uniform length for power application
With a three-dimensional thermal-electrical model, a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability. Compared with the traditional uniform emitter length design, the peak temperature of multi-finger SiGe HBT with non-uniform length is lowered. Therefore, it can operate at large current and has a higher power handling capability in power application.