0.33- mu m gate-length millimeter-wave InP-channel HEMTs with high f/sub 1/ and f/sub max/
The fabrication of 0.33- mu m gate-length AlInAs/InP high electron mobility transistors (HEMTs) is reported. These InP-channel devices have f/sub t/ values as high as 76 GHz, f/sub max/ values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic DC transconductances are as high as 610 mS/mm; with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8*10/sup 7/ cm/s, while the f/sub t/L/sub g/ product is 29 GHz- mu m. These results are comparable to the best reported results for similar InGaAs-channel devices.<<ETX>>