Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots
Self-assembled In<sub>x</sub>Ga<sub>1-x</sub>As quantum dots, with In(Ga)As capping layers to mediate the strain distribution were studied by x-ray reciprocal space mapping, TEM, and PL. The In<sub>0.75</sub>Ga<sub>0.25</sub>As QDs capped with In<sub>0.1</sub>Ga<sub>0.9</sub>As has a PL emission at lambda = 1.31 mum.