Investigation of resistivity dependent microwave annealing on Si substrates
Heating of silicon substrates featuring different resistivity values by microwave annealing is investigated. The absorption of microwave energy for silicon wafers is found to be consistent with ohmic conduction loss theory. The strongest absorption occurs when the resistivity was around 10 Ω·cm. As the carrier concentration and the conductivity of silicon increase with temperature, the absorption of microwave energy also varies during the annealing processes. Furthermore, it is found that the electric field density around the annealed silicon wafer is stronger for higher conductive silicon substrates at fixed microwave power.