A first-principle analysis of resistive switching enhancement of HfO2 thin film induced by zinc doping method
Significant performance enhancement of HfO2 based resistive switching random access memory (RRAM) devices were achieved by Zn doping method. The non-volatile memory properties including operation voltage and uniformity were fully characterized. What's more, from first-principle analysis results, The Zn-3d states are shifted upward when the oxygen vacancy locates at the nearest neighboring site of Zn atom. Dopant-assisted formation and migration of oxygen vacancies would induce the suppression of randomicity of conductive filaments' behavior, which is possible lead to such RRAM characteristics improvement.