Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C<inf>gs</inf>, C<inf>gd</inf>, f<inf>t</inf> and f<inf>c</inf>. Problems arise when trying to reproduce the values of g<inf>d</inf> and C<inf>ds</inf> due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g<inf>m</inf> and also f<inf>max</inf>.