Design and fabrication of 980nm three-active regions high power semiconductor lasers
Based on the principle of tunnel regeneration, three-active regions high power semiconductor lasers were designed and fabricated. Powered by pulse currents limited at 30A, the emitting wavelength of 998nm, the optical power output of 40.48W, Ith of 7.95A and the differential efficiency of 1.62W/A were obtained.