High-performance surface channel In-rich In0.75Ga0.25As MOSFETs with ALD high-k as gate dielectric
High-performance inversion-type enhancement-mode n-channel MOSFETs on In-rich In<sub>0.75</sub>Ga<sub>0.25</sub>As using ALD Al<sub>2</sub>O<sub>3</sub> as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0times10<sup>7</sup> cm/s at drain voltage of 2.0 V are achieved at 0.75-mum gate length devices. The device performance of In-rich InGaAs NMOSFETs with different indium contents, In<sub>0.53</sub>Ga<sub>0.47</sub>As, In<sub>0.65</sub>Ga<sub>0.35</sub>As and In<sub>0.75</sub>Ga<sub>0.25</sub>As, are systematically studied.