High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering
High performance deep-submicron inversion-mode InGaAs MOSFET with ALD Al<inf>2</inf>O<inf>3</inf> as gate dielectric has been demonstrated. Transistors with gate lengths down to 150 nm have been fabricated and characterized. Record high extrinsic transconductance of 1.1 mS/µm has been achieved at V<inf>ds</inf> = 2.0 V with 5 nm Al<inf>2</inf>O<inf>3</inf> as gate dielectric. G<inf>m</inf> can be further improved to 1.3 mS/µm by reducing the gate oxide thickness to 2.5 nm at V<inf>ds</inf> = 1.6 V. HBr pre-treatment, retro-grade structure and halo-implantation processes are introduced for the first time into III-V MOSFET to further improve high-k/InGaAs interface quality and on-state/off-state performance of the devices. The key transistor scaling metrics such as S.S., DIBL, V<inf>T</inf> of these treated devices are compared with the controlled devices with channel lengths from 250 nm to 150 nm.