A novel 3D active channel high power 4H-SiC MESFETs with improved breakdown characteristic
A novel 3D tri-gate high power 4H-SiC MESFET with improved breakdown characteristic is presented in this paper. Different from the conventional structure, the proposed structure contains both horizontal and vertical active channels which contacted 3D tri-gate. This method, in fact, increases the equivalent channel width and therefore enhances the maximum drain current. And buried-channel technology is used to improve the breakdown characteristic of the proposed structure. Simulation results show that the maximum drain current and breakdown voltage of the proposed structure are 1591 mA/mm and 190 V, 274.4% and 126.7% larger than that of the conventional one, respectively. Due to the above two technologies, the simulated power density gets a significant enhancement, and the simulated value (18 W/mm) is 310.3% larger than that of the conventional one (5.8 W/mm).