Improved characteristics of 4H-SiC MESFETs with partly p-type doped space layer
4H-SiC MESFET with partly p-type doped space layer is proposed and the DC and RF characteristics are analyzed in this paper by 2D numerical simulation. The simulated results show that the breakdown voltage is about 56% larger than that of the conventional structure, and the saturated drain current obtained 4.4% enhancement too. The calculated maximum output power density at operation point VGS=−10V, VDS=40V are 10.8W/mm and 6.2W/mm respectively for 4H-SiC MESFETs with the proposed structure and conventional structure. As compared with the conventional structure, RF simulation results show that the MESFETs with partly p-type doped space layer have a 2.7dB gain improvement at 2GHz.