Plasma enhanced atomic layer deposition of molybdenum oxide from Mo(CO)6 and O2 plasma for 2D electronic device application
This work is focused on synthesis of molybdenum oxide (MoO3) by Plasma Enhanced Atomic layer deposition (PEALD) using molybdenum hexacarbonyl (Mo(CO)6) is selected as precursor for Mo and O2 is adopted as precursor for plasma. Ex-situ growth characterizations were carried out by X-ray reflectivity (XRR), scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XRR result indicates the linear growth of the thin films. While amorphous as-deposited film was observed by XRD. XPS and SEM was applied to further analyze the quality of the film. The growth of MoO3 can be layer controllable and have good film continuity. There merits are helpful in further synthesis of MoS2 by sulfurization.