A 3-10GHz Low-Noise Amplifier Using Resistive Feedback in SiGe HBT Technology
This paper presents a SiGe HBT low noise amplifier (LNA) using resistive feedback scheme for ultra-wideband (UWB) applications. This amplifier is implemented in 0.35um SiGe process and is unconditionally stable. The simulated results show the LNA has over 21dB gain with less than 1dB variation over 3-10GHz. The matched input and output reflection are all less than -10dB. The noise figure is 4.03dB at 3GHz and increases to 4.85dB at 10GHz, which is good enough for the resistive feedback LNA.