A low power SiGe HBT LNA utilizing serial inductance for wideband matching
A UWB LNA (low noise amplifier) based on 0.35 ¿m SiGe BiCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5 dB with the variation of 1.9 dB and the power consuming is 6.3 mW in full band from 3.1 GHz to 10.6 GHz. This SiGe UWB LNA exhibits less than 5 ps group delay variation and less than 3.85 dB NF over the entire band.