Study on Millisecond and Nanosecond laser-induced damage of TiO2/SiO2 anti-reflectors
The laser induced damage threshold (LIDT) of TiO2/SiO2 anti-reflectors (AR) acted by 10ns–1064nm and 1ms–1064nm lasers are investigated. The LITD at 10ns and 1ms pulse duration are 2.9J/cm2 and 290J/cm2, respectively. The damaged morphologies are observed by metallographic microscope. It is found that the damage during 10ns and 1ms pulse duration are film damage and substrate damage, respectively. Analysis of laser-induced damage on AR coatings is carried out by temperature field calculation. Theoretical results show that 1ms laser induced damage depth is deeper than that of the 10ns and meet experimental well.