2D simulation of a SiGe HBT based on energy balance model
An implementation of the energy balance (EB) model is presented to describe energy transport in heterostructure transistors in this paper. As an application, a 2D simulation of a SiGe heterostructure bipolar transistor (HBT) is carried out. Some typical numerical results are presented, such as the I-V curve, distribution of electron density, current density and electron temperature, etc. Compared with the classical drift diffusion (DD) model, the EB model gives more accurate results at the cost of time and space complexity.