Broad and flat emission spectrum from InGaAs/InGaAlAs asymmetric multiple quantum wells: effect of well-width and modulation-doping profiles
Asymmetric InGaAs/InGaAlAs multi-quantum wells exhibit a = 1.55 mum broad and flat emission spectrum with 3-dB bandwidth up to 2500 Aring. Emission spectra and laser diodes by the effects of well-width and modulation-doping profiles are presented