Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications
Although the melting laser annealing can activate the heavily phosphorus-doped epitaxial Ge on silicon-on-insulator by chemical vapor deposition, the dopant segregation occurs after the rapid thermal process at 550 °C for 3 min even with SiO<sub>2</sub> capping. However, the active dopant concentration can be recovered after the second laser annealing to melt Ge again due to higher P solubility in the liquid Ge than the solid Ge. The temperature distribution and the melt depth of epi-Ge is mainly determined by the laser fluence. Selective laser annealing is used to simultaneously reach low dopant concentration in the channel regions for good gate controllability, and high concentration in the source and drain regions with low parasitic resistance for the transistors. As a result, the low specific contact resistivity of <inline-formula> <tex-math notation="LaTeX">$1.2\ \times \,\,10^{-8}\,\,\Omega $ </tex-math></inline-formula> cm<sup>2</sup> using the Ni–Ge/n<sup>+</sup>Ge, the 21% current enhancement of the Ge + Si nFET as compared to the device without the selectively second laser annealing and the Ni–Ge contact, and the similar subthreshold slope after the selectively second laser annealing are achieved. The Si channel underneath the Ge channel also contributes about 38% of the total current.