A fully integrated voltage controlled phase shifter with lossless active inductors
This paper presents a method to design a voltage controlled phase shifter in the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm 1P6M CMOS process. The proposed phase shifter includes series hybrid structure and terminated ports2 and port3 of the hybrid with MOS varactor, however, the active inductors was used instead. The S21 and phase controlled performance get greatly improved. The chip size of the proposed phase shifter could also be reduced. The simulation results showed that a small variation in S21 (0.64±0.19dB) with the control voltage changing from −0.5V to 1V.