Characterisation of surface micromachined beams with floating gate transistor
A micromechanical beam structure has been fabricated with surface micromachining of a 2 /spl mu/m polysilicon layer and includes capacitive electrodes for excitation and floating gate MOS transistors for detection. The device is presented in two possible configuration that we call double gate (DG) or extended gate (EXTG). Preliminary results of the electrical characterisation and mechanical behaviour are presented.