A CMOS neural oscillator using negative resistance
A CMOS neural oscillator using negative resistance has been designed and fabricated in an AMI 0.5 /spl mu/m double poly technology through MOSIS. The proposed neural oscillator consists of a nonlinear resistor with negative resistance as well as standard OTAs and capacitors. Simulations of a network of oscillators demonstrate cooperative computation. Measurements of the fabricated oscillator chip confirm the input-gated oscillatory behavior of the cell.