Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing
The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light–current characteristics after the bandgap is postgrowth-tuned by 100 nm.