Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance
The excellent resistive switching characteristics of atomic-layer-deposited HfLaO-based devices are investigated for nonvolatile memory applications. With the help of nonlattice oxygen ions which is designed to incorporate into the film by decomposition of H2O2 during process, highly uniform and reproducible resistance switching cycles could be observed with the resistive ratio as high as 106 for more than 10 000 cycles. In addition, the fast operation speed (10 ns) has been demonstrated. Conduction of the off state is dominated by the space-charge-limited hopping, while the ohmic behavior dictates the on state, which suggests a filamentary conduction mechanism. Moreover, the estimated readout characteristics under different read voltages from 0.3 to 1 V were sufficiently stable to fulfill the requirement for memory application. Considering the excellent memory switching behavior, a resistance switch device composed of a promising high-k HfLaO dielectric film is a possible candidate to be integrated into future memory processes.