Band structure calculations of Ge-Si core-shell nanowires
We have modeled and calculated the band structure of Ge-Si core-shell nanowire, with both subband interactions between Ge core and Si shell and the inhomogeneous strain effects taken into account. Our results show that the effective masses of subbands, the densities of states and quantum conductance will undergo significant changes and converge to saturated values, as the Si shell turns thicker and provides more band modulations.