Characterization of low-dielectric-constant SiCON films grown by PECVD under different RF power
In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH<sub>4</sub>, N<sub>2</sub>O and C<sub>2</sub>F<sub>6</sub> precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film decrease with increasing the RF power. In the present experiment, a k value of 2.35 is achieved while retaining a low leakage current of 2.7×10<sup>-7</sup>A/cm<sup>2</sup> at 7.8MV/cm.