Ballistic GaInAs/AlInAs devices technology and characterization at room temperature
We have developed technology based on GaInAs/AlInAs for building ballistic devices working at room temperature. We first present here processes for passive and active devices (T-branch junctions (TBJs), Y-branch junctions (YBJs) and TBJs with Schottky gates. Then, we present DC characterization of TBJs to prove the ballistic behaviour and new results for YBJs.