High performance n-MOS finFET by damage-free, conformal extension doping
A solution for conformal n-type finFET extension doping is demonstrated, yielding ION values of 1.23 mA/µm at IOFF=100 nA/um at 1V. This high device performance results from 40% reduced external resistance, which in term is stemming from 130% increased fin sidewall doping (confirmed by SIMS, SSRM and Atom Probe) relative to ion implant process. In this work we also report lowered gate leakage due to the damage-free extension doping.