A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
In this paper, a detailed research of the high-frequency noise sources and figures of merit (FOMs) of fabricated deep-submicrometer n-channel fully depleted silicon-on-insulator MOSFETs is carried out. Special care is given to reproduce the main topology parameters, together with the most relevant parasitic elements of real devices in order to accomplish an accurate and reliable simulation. The information provided by the Monte Carlo (MC) tool allows getting a physical insight of the relationship between internal quantities and the main noise sources inside the device; moreover, the spectral density of velocity fluctuations has been analyzed spatially in order to determine the local current noise source in the gradual channel and velocity overshoot sections of the effective channel. Together with the calculation of intrinsic noise sources, the MC simulator is able to reproduce the measurements for the main noise FOMs in the RF and microwave frequency ranges. Moreover, the whole simulation framework allows addressing the importance of parasitic elements in the final value of these FOMs.