The epitaxy of GaN in deep and submicron holes over Si substrate
A simple and effective method to grow GaN on Si substrates has been achieved. The method that GaN comes out from a submicron and deep hole with nearly zero dislocations above the mask is demonstrated. This work proves that reducing the epitaxy area by using mask and increasing the depth to width ratio of pattern contribute to filtering the dislocations and improving the quality of GaN.