A novel Trench Fast Recovery Diode with injection control
A novel Trench Fast Recovery Diode (FRD) structure with injection control is proposed in this paper. The proposed structure achieves improved carrier profile without the need for excess lifetime control. This substantially improves the device performance, especially at extreme temperatures (-40 °C to 175 °C). The device maintains low leakage at high temperatures, and its Qrr and Irm do not degrade as is the usual case in heavily electron radiated devices. A 1600 diode using this structure is proposed in this paper, with a low Vf and good reverse recovery properties. The experimental results show that the structure maintains its performance at high temperatures.