Nonlinear effects in T-branch junctions
The negative potential appearing at the central branch of T-branch junctions (TBJs) when biasing left and right contacts in push-pull fashion has been found to appear under high biasing not only for short (ballistic) TBJs but also for long (diffusive) ones. By means of a microscopic Monte Carlo simulation we are able to explain this nonlinear effect as a consequence of intervalley scattering mechanisms leading to the emergence of an accumulation domain that modifies the electronic potential profile within the devices.