Small-signal modeling of In2O5Sn based transparent gate recessed channel MOSFET for microwave/RF applications
In this paper, modeling of the small signal equivalent circuit of Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Z (impedance) parameters and Y (admittance) parameters is presented. The modeled and simulated results are compared with Conventional Recessed Channel (CRC) MOSFET having metal gate electrode at THz frequency range, using ATLAS-3D device simulator. Instead of metal gate, In2O5Sn (Indium Tin Oxide) ITO as a transparent conducting oxide (TCO) is amalgamated. The input impedance of TGRC-MOSFET enhances by 99.4% as compared to CRC-MOSFET, and input admittance improves by 32.9% in the proposed device as compared to its counterpart. Simulation results reveal that the proposed device design improves the small signal behavior thus, providing the detailed insight to RF engineers for microwave applications/ RFIC design.