DC and RF Characterization of Sub-100-nm-Gate-Length Strained Ge-on-Insulator p-MOSFETs
In this paper, the fabrication and characterization of strained Ge-on-insulator transistors with gate lengths down to 65 nm is described and also, for the first time, RF characteristics of sub-100-nm gate-length Ge MOSFET are reported. It is concluded that considerable further improvement is possible in both the performance and the short-channel characteristics by increasing the strain in the channel, and by the use of halo implants.