The microwave noise characteristics of InAlN/GaN HEMTs
The microwave noise characteristics of InAlN/GaN heterojunction HEMTs are analysed by using an equivalent circuit model in this paper. It shows that the minimum noise figure of InAlN/GaN HEMTs can be comparable with that of AlGaN/GaN HEMTs at X-band and higher frequency band. However, at the lower microwave frequency band, the minimum noise figure of InAlN/GaN HEMTs is a little worse, the reason of which is because of its high gate-leakage current. At last, three proposals are provided to improve the noise characteristics of InAlN/GaN HEMTs.