Numerical model and experimental study on comparison of semiconductor pulsed power devices
The characteristics applied in pulsed power area for the power semiconductor devices of RSD (reversely switched dynistor), thyristor and IGBT are compared synthetically in this paper. By establishing the two-dimensional electro-thermal coupling models for the three types of devices, the turn-on performances of each one at low and high current density are discussed, separately. The results show that the special type device RSD always acquires the lowest turn-on voltage and power dissipation. This advantage is more obvious with the current density increase. The experimental results have approved the trend.