Production of next generation InP-HBT epiwafers by MBE
The current status of InP-based HBT epiwafer production using multi-wafer MBE systems at IQE Inc. is presented. Control and stability of critical material growth parameters demonstrate reproducible quality of standard InP/InGaAs/InAlAs HBT structures grown on 4-inch diameter substrates. Experimental data from HBTs grown on newly developed 6-inch substrates exhibit good material and device parameters. Development of next-generation structures, including GaAsSb-base and metamorphic HBTs, is also discussed.